Journal
SUPERLATTICES AND MICROSTRUCTURES
Volume 27, Issue 5-6, Pages 519-524Publisher
ACADEMIC PRESS LTD
DOI: 10.1006/spmi.2000.0862
Keywords
sp3s*tight-binding; genetic algorithm; effective mass; parametrization; III-V material; GaAs; InAs; AlAs; GaP; InP; AlP; GaSb; InSb; AlSb
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A genetic algorithm approach is used to fit orbital interaction energies of sp3s* tight binding models for the nine binary compound semiconductors consistent of Ga, Al, In and As, P, Sb at room temperature. The new parameters are optimized to reproduce the bandstructure relevant to carrier transport in the lowest conduction band and the highest three valence bands. The accuracy of the other bands is sacrificed for the better reproduction of the effective masses in the bands of interest. Relevant band edges are reproduced to within a few meV and the effective masses deviate from the experimental values typically by less than 10%. (C) 2000 Academic Press.
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