Temperature stabilized effusion cell evaporation source for thin film deposition and molecular-beam epitaxy

A simple effusion cell evaporation source for thin film deposition and molecular-beam epitaxy is described. The source consists of a crucible with a thermocouple temperature sensor heated by a resistive crucible heater. Radiation heat transfer from the crucible to the thermocouple produces a consistent and reproducible thermocouple temperature for a given crucible temperature, without direct contact between the thermocouple and the crucible. The thermocouple temperature is somewhat less than the actual crucible temperature because of heat flow from the thermocouple junction along the thermocouple lead wires. In a typical case, the thermocouple temperature is 1007 degrees C while the crucible is at 1083 degrees C. The crucible temperature stability is estimated from the measured sensitivity of the evaporation rate of indium to temperature, and the observed variations in the evaporation rate for a fixed thermocouple temperature. The crucible temperature peak-to-peak variation over a one hour period is 1.2 degrees C. Machined molybdenum crucibles were used in the indium and copper sources for depositing CuInSe2 thin films for solar cells. (C) 2000 American Institute of Physics. [S0034-6748(00)03305-0].