Journal
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS
Volume 39, Issue 5A, Pages L390-L392Publisher
JAPAN SOC APPLIED PHYSICS
DOI: 10.1143/JJAP.39.L390
Keywords
Mg diffusion; in situ Mg doping process; p-type GaN; anneal; secondary ion mass spectroscopy (SIMS); Hall measurement; photoluminescence (PL); phonon replica
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Magnesium (Mg) diffusion into unintentionally doped n-type GaN to form p-type GaN was studied, The Hall measurement data indicated that the diffused and annealed samples consistently show p-type conductivity with average hole concentrations in the range of 10(16) cm(-3)-10(17) cm(-3) and mobility of <90 cm(2).V.s. The diffused GaN showed a strong Mg related emission band with zero phonon peak at 3.27 eV and followed by two longitudinal optical (LO) phonon replica with similar to 90 meV separation at 10K.
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