Journal
THIN SOLID FILMS
Volume 366, Issue 1-2, Pages 294-301Publisher
ELSEVIER SCIENCE SA
DOI: 10.1016/S0040-6090(00)00740-9
Keywords
V2O3 thin film; coating-pyrolysis process; epitaxy; alpha-Al2O3 substrate
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Epitaxial films of vanadium(III) oxide V2O3 were prepared on the C-, A-, and R-planes of alpha-Al2O3 substrates by a coating-pyrolysis process. The final heat treatment was carried out at 1000 degrees C in a precisely controlled gas how of a CO-CO2 mixture (pCO/pCO(2) = 10(-1)) at ambient pressure. This condition corresponds to an oxygen partial pressure of similar to 10(-12) atm. The X-ray diffraction theta-2 theta scanning and pole-figure analysis showed that the 0.5-mu m-thick V2O3 films chiefly comprise the grains grown epitaxially to the substrate surfaces and a small amount of uniaxially oriented crystallites with the c-axis perpendicular to the substrate surfaces. In the films grown on the C- and A-planes of alpha-Al2O3, epitaxial grains grown 60 degrees-rotated in the basal plane relative to the substrates (or 180 degrees domains) were also present. The occurrence of the uniaxially c-axis-oriented and 180 degrees domains may be attributed to the crystallization from the film surf;ice accompanying the reduction of the precursors, which contain higher-valence vanadium ions, by the GO-CO: mixed gas, whereas the epitaxial grains grow from the film/substrate interface. (C) 2000 Elsevier Science S.A. All rights reserved.
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