Journal
PHYSICAL REVIEW LETTERS
Volume 84, Issue 19, Pages 4421-4424Publisher
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevLett.84.4421
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A magnetic field applied parallel to the two-dimensional hole system in the GaAs/AlGaAs heterostructure, which is metallic in the absence of an external magnetic field, can drive the system into insulating at a finite field through a well-defined transition. The value of resistivity at the transition is found to depend strongly on density.
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