Journal
ELECTRONICS LETTERS
Volume 36, Issue 10, Pages 912-913Publisher
IEE-INST ELEC ENG
DOI: 10.1049/el:20000680
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The gate-voltage dependence of low-frequency noise in GaN/AlGaN heterostructure field-effect transistors has been investigated in the linear and subsaturation regions. Analysis of experimental data for different transistors indicates that for all examined biases the noise spectrum is dominated by the channel noise rather than noise originating in the series resistors. The obtained results shed new light on the noise sources and may lead to improvements in the noise performance of GaN transistors.
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