Journal
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
Volume 39, Issue 5B, Pages L445-L448Publisher
INST PURE APPLIED PHYSICS
DOI: 10.1143/JJAP.39.L445
Keywords
gallium nitride; aluminum gallium nitride; ultraviolet; light-emitting diode; double heterostructure; sapphire
Categories
Ask authors/readers for more resources
Room-temperature deep-ultraviolet emission has been observed from Al0.13Ga0.87N/Al0.10Ga0.90N double heterostructure tight-emitting diodes (LEDs) on (0001)-oriented sapphire substrate. By introducing undoped barrier layers, which sandwich the active layer, the LED was operated at a peak emission wavelength of 339 nm with a narrow linewidth of 5.6 nm. The dependence of emission intensity on injection current suggests that the nonradiative recombination was suppressed and the diffusion current for the recombination process was dominant at the injection current of over 20 mA.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available