Synthesis of boron carbide films by ion beam sputtering

Ion beam sputtering deposition technique was employed to prepare boron carbide (B4C) films at different substrate temperature. The structure and mechanical properties of the B4C films have been studied over the substrate temperature range of 50-350 degrees C in order to study the temperature effect. Infrared spectroscopy, Auger electron spectroscopy, X-ray diffraction and X-ray photoelectron spectroscopy were used to evaluate the structural properties. The formation of B4C was found to strongly depend on the deposition temperature. It was shown that a higher deposition temperature was beneficial for the boron carbide synthesis. Hardness of these films was also thoroughly studied by micro-indentation facility. The hardness increased and reached a very high value of 43 GPa at a substrate temperature of 350 degrees C. (C) 2000 Elsevier Science S.A. All rights reserved.