Journal
MICROELECTRONIC ENGINEERING
Volume 53, Issue 1-4, Pages 485-488Publisher
ELSEVIER SCIENCE BV
DOI: 10.1016/S0167-9317(00)00361-0
Keywords
-
Ask authors/readers for more resources
We have developed a negative silylation process using a new photoacid generator, which does not easily evaporate during post-exposure-bake (PEB) and a new polymer, poly(1-ethoxyethyloxystyrene (49)-t-butyloxy-carbonyloxystyrene(48)). 0.12 mu m line-and-space patterns were fabricated with a high sensitivity of 4mJ/cm(2).
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available
Share Paper
