Journal
JOURNAL OF CRYSTAL GROWTH
Volume 214, Issue -, Pages 387-390Publisher
ELSEVIER SCIENCE BV
DOI: 10.1016/S0022-0248(00)00114-7
Keywords
magnetic semiconductors; ferromagnetic; RKKY; p-type doping; transport; Hall effect; molecular beam epitaxy
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p-type doping of molecular-beam-epitaxy grown layers of the diluted magnetic semiconductor Zn(1-X)MnxTe is achieved by using an active nitrogen cell. The strong interaction between the localized Mn spins and the holes deeply modifies the transport properties (metal-insulator transition, spin-dependent Hall effect). In spite of the weak localization of the carriers at low temperature, the holes clearly induce a ferromagnetic interaction between the localized spins, which is discussed as a function of Mn content and hole concentration. (C) 2000 Elsevier Science B.V. All rights reserved.
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