Journal
SURFACE SCIENCE
Volume 457, Issue 1-2, Pages L337-L341Publisher
ELSEVIER SCIENCE BV
DOI: 10.1016/S0039-6028(00)00417-9
Keywords
chemisorption; surface electronic phenomena (work function, surface potential, surface states, etc.); synchrotron radiation photoelectron spectroscopy
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H2O was adsorbed onto n-InP(110) cleavage planes at 100 K and its interaction with the surface was investigated by SXPS and LEED. H2O is dissociatively adsorbed at low coverages forming In-OH and P-H bonds, which lead to pinning acceptor states close to midgap. At higher coverages H2O is molecularly adsorbed and flat band potential is retained. During annealing first the molecularly adsorbed H2O desorbs and afterwards the surface rearranges to form an In suboxide. The oxidized surface shows Fermi level pinning at E-F-E-VB = 0.9 eV. (C) 2000 Elsevier Science B.V. All rights reserved.
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