Journal
JOURNAL OF CRYSTAL GROWTH
Volume 214, Issue -, Pages 50-54Publisher
ELSEVIER
DOI: 10.1016/S0022-0248(00)00057-9
Keywords
ZnO; zinc oxide; Si substrate; MBE; PL; exciton
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The key to grow ZnO on Si by radical source (RS)-MBE is surface nitridation of the Si substrate. Growth of ZnO on Si(1 1 1) has been carried out using NH, plasma nitridation of the Si surface prior to ZnO growth and strongly c-axis-orientated ZnO thin films were obtained. Strong excitonic PL emission around 3.38 eV was observed from ZnO on Si while Hall measurements showed n-type conductivity with an electron concentration of 1.87 x 10(18) cm(-3). (C) 2000 Elsevier Science B.V. All rights reserved.
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