Journal
MICROELECTRONIC ENGINEERING
Volume 53, Issue 1-4, Pages 609-612Publisher
ELSEVIER SCIENCE BV
DOI: 10.1016/S0167-9317(00)00388-9
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The 4x Ion Projection Lithography (IPL), which is designed to reach sub 100nm resolution on the wafer plane, uses stencil membrane masks out of 150mm SOI (Silicon On Insulator) wafers [1]. The structured circular membranes have a diameter of 126mm and a thickness of 3 mu m. Results of a new sub-quarter micron trench etch and membrane dry etch process are presented and discussed.
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