Journal
MICROELECTRONICS JOURNAL
Volume 31, Issue 6, Pages 397-403Publisher
ELSEVIER SCI LTD
DOI: 10.1016/S0026-2692(00)00041-0
Keywords
surface potential effective density-of-states; metal-oxide-semiconductor-field-effect-transistor; Maxwell-Boltzmann statistics
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The concept of surface potential effective density-of-states (SLEDOS) is presented in modeling the quantized inversion layer. Carrier distribution models both in semi-classical and quantum mechanical cases are developed based on SLEDOS. Threshold voltage shift model due to QMEs, a new iteration method to calculate the inversion carrier sheet density and surface potential, as well as a gate capacitance model are built based on the concept of SLEDOS. It is demonstrated that the concept of SLEDOS reveals the physical nature of inversion layer quantization and provides a feasible method to characterize MOS inversion layer. (C) 2000 Elsevier Science Ltd. All rights reserved.
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