Journal
IEEE TRANSACTIONS ON NUCLEAR SCIENCE
Volume 47, Issue 3, Pages 508-513Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/23.856472
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A new SPICE model of irradiated MOSFET taking into account the real response of the four electrodes is proposed. A comparison between SPICE-generated transient response and PISCES device simulation demonstrates the accuracy benefits when used in complex electronic architectures.
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