Journal
MICROELECTRONIC ENGINEERING
Volume 53, Issue 1-4, Pages 305-308Publisher
ELSEVIER SCIENCE BV
DOI: 10.1016/S0167-9317(00)00320-8
Keywords
-
Ask authors/readers for more resources
For CD (critical dimension) control with high accuracy, it is important to correct the proximity effect as well as to compensate the shape bias in electron beam lithography (EBL). In this work, we propose a method for determining the proximity effect parameters and the shape bias parameter concurrently. Due to the beam current instability of the E-beam writer, it is difficult to determine the parameters of the forward scattering range by delineating sub-0.1 mu m patterns. Accordingly, it is important to determine the proximity effect parameters without the errors that can occur in delineating sub-0.1 mu m patterns. Though the pattern bias has a small value such as tens-nm, it affects the CD control at sub-micron regime. For demonstrating the accuracy of the parameters, proximity effect correction (PEC) is carried out using the conventional dose modulation method after shape bias compensation. The variation of CD errors for Lines and Spaces (L&S) patterns with PEC is less than 4% using the obtained parameters.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available