☆
4.6
Article
Ionization energies and electron mobilities in phosphorus- and nitrogen-implanted 4H-silicon carbide
JOURNAL OF APPLIED PHYSICS (2000)
Rate this paper
The primary rating indicates the level of overall quality for the paper. Secondary ratings independently reflect strengths or weaknesses of the paper.
Discover Peeref hubs
Discuss science. Find collaborators. Network.
Join a conversationAsk a Question. Answer a Question.
Quickly pose questions to the entire community. Debate answers and get clarity on the most important issues facing researchers.
Get Started