Journal
IEEE ELECTRON DEVICE LETTERS
Volume 21, Issue 7, Pages 329-331Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/55.847370
Keywords
infrared; photodetector; quantum dot; self-assembled
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A room temperature operation of far-infrared detectors made of self-assembled quantum dots embedded in the channel region of modulation-doped heterostructures is demonstrated. At room temperature, the detector shows a low dark current ranging in the nano-amperes at a bias voltage of 10 V. After the optimization of the separation between the quantum dot region and the 2DEG, a peak responsivity of 5.3 A/W is obtained at 9.0 mu m. The high detectivities of 6 x 10(8) and 5 x 10(10) cmHz(1/2)/W are obtained at room temperature and 80 K, respectively.
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