Ferromagnetic semiconductor heterostructures based on (GaMn)As

Growth, transport, magnetic, magneto-optical, and magnetotunneling properties of ferromagnetic semiconductor (GaMn)As and its quantum heterostructures, including superlattices and tunnel junctions, are presented. Spin-related phenomena in such III-V based ferromagnetic quantum heterostructures are shown to give a new degree of freedom in the band-gap engineering and wave function engineering for semiconductor electronics and photonics. (C) 2000 American Vacuum Society. [S0734-2101(00)13004-0].