Journal
IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume 47, Issue 7, Pages 1320-1324Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/16.848271
Keywords
annealing; breakdown voltage; GaN diodes
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The reverse breakdown voltage (V-B) and forward turn-on voltage (V-F) Of n- and p-GaN Schottky diodes were used to examine the effects of Cl-2/Ar and Ar plasma damage. Even short plasma exposures (4 secs) produced large changes in both V-B and V-F, with ion mass being a critical factor in determining the magnitude of the changes. The damage depth was established to be 500-600 Angstrom and the damaged material could be removed in boiling NaOH solutions, producing a full recovery of the diode properties. Annealing at 700 to 800 degrees C under N-2 produced only a partial recovery of V-B and V-F.
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