4.6 Article

Imaging of a silicon pn junction under applied bias with scanning capacitance microscopy and Kelvin probe force microscopy

Journal

APPLIED PHYSICS LETTERS
Volume 77, Issue 1, Pages 106-108

Publisher

AMER INST PHYSICS
DOI: 10.1063/1.126892

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Scanning capacitance microscopy (SCM) and Kelvin probe force microscopy (KPFM) are used to image the electrical structure of a silicon pn junction under applied bias. With SCM, the carrier density inside a diode is imaged directly. With KPFM, the surface potential distribution of an operating diode is measured, revealing different behavior from that in bulk. The surface potential drop is extended deep into the lightly p-doped region at reverse bias, reflecting the existence of the surface space-charge region as confirmed by the numerical simulation. (C) 2000 American Institute of Physics. [S0003-6951(00)03427-6].

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