Journal
PHYSICAL REVIEW B
Volume 62, Issue 4, Pages R2259-R2262Publisher
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.62.R2259
Keywords
-
Ask authors/readers for more resources
Using the linearized augmented plane wave method, the self-consistent electronic structure of the group V accepters N, P, As, and Sb in CdTe is calculated in order to derive the electric field gradient (EFG) at the neighboring Cd site. The agreement between theory and experiment is very good and, due to the high sensitivity of the EFG on the local structure, it is evidence of the accuracy of the calculated lattice relaxation. The dependence of the EFG on the charge state of the group V accepters is discussed in terms of the calculated electronic density of states.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available