Journal
SIAM JOURNAL ON APPLIED MATHEMATICS
Volume 61, Issue 1, Pages 74-101Publisher
SIAM PUBLICATIONS
DOI: 10.1137/S003613999833294X
Keywords
semiconductors; hydrodynamical model for charge transport; hyperbolic systems; shock-capturing numerical methods for conservation laws
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A hydrodynamical model based on the theory of extended thermodynamics is presented for carrier transport in semiconductors. Closure relations for fluxes are obtained by employing the maximum entropy principle. The production terms are modeled by fitting the Monte Carlo data for homogeneously doped semiconductors. The mathematical properties of the model are studied. A suitable numerical method, which is a generalization of the Nessyahu-Tadmor scheme to the nonhomogeneous case, is provided. The validity of the constitutive relations has been assessed by comparing the numerical results with detailed Monte Carlo simulations.
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