Journal
SENSORS AND ACTUATORS B-CHEMICAL
Volume 66, Issue 1-3, Pages 181-183Publisher
ELSEVIER SCIENCE SA
DOI: 10.1016/S0925-4005(00)00341-5
Keywords
pH-ISFETs; hysteresis; drift; a-Si : H
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According to the experimental results, the output behavior of the device consists of four parts: fast response, slow response, drift and hysteresis. The hysteresis and drift limit the accuracy obtained from pH-sensitive surface in ion-sensitive field-effect transistors (pH-ISFETs). In this paper, we have studied that hysteresis affects of hydrogenated amorphous silicon (a-Si:H)-gate ISFETs by exposing the device to two cycles of pH values and compared the hysteresis amounts. In addition, we have measured the drift effect of a-Si:H at the different pH values and understand the influence of pH values for the drift effects of a-Si:H-gate ISFETs. (C) 2000 Elsevier Science S.A. All rights reserved.
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