Journal
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
Volume 3, Issue 4, Pages 227-235Publisher
ELSEVIER SCI LTD
DOI: 10.1016/S1369-8001(00)00037-8
Keywords
silicon; vacancy; self-interstitial; migration; diffusion
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A review is given of what has been learned from electron paramagnetic resonance (EPR) and localized vibrational mode (LVM) spectroscopy concerning isolated lattice vacancies and self-interstitials, and their interactions with other defects in silicon. This information can supply the basic tools with which to help unravel much of the complex processes and structures involved in crystal growth, device processing, and radiation damage, (C) 2000 Elsevier Science Ltd. All rights reserved.
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