Journal
PHILOSOPHICAL MAGAZINE LETTERS
Volume 80, Issue 8, Pages 535-541Publisher
TAYLOR & FRANCIS LTD
DOI: 10.1080/09500830050110468
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Cracks in a 2% tensile strained In0.79Ga0.28P film grown on an InP substrate by molecular-beam epitaxy have been studied by cross-section transmission electron microscopy and scanning probe microscopy. A dislocation analogue (i.e. replacing the crack by an array of equivalent infinitesimal edge dislocations) is employed to account for the ratio of the crack-opening displacement to the normal surface displacement associated with the crack.
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