Ferroelectric neuron integrated circuits using SrBi2Ta2O9-gate FET's and CMOS Schmitt-trigger oscillators

A pulse frequency modulation (PFM) type ferroelectric neuron circuit composed of a metal-ferroelectric-semi-conductor field effect transistor (MFSFET) and a CMOS Schmitt-trigger oscillator was Fabricated on a SOI structure, in which SrBi2Ta2O9 (SBT) was used as a ferroelectric gate material of the FET, It was found that the fabricated MFSFET showed a relatively. good I-D-V-G (drain current versus gate voltage) characteristic with a hysteresis loop due to ferroelectricity of the SET film and that it acted as a synapse device with adaptive-learning function. It was also found that the output pulse height of the circuit was as high as the power supply voltage and that output pulse frequency was changed as the number of applied input pulses increased.