Journal
PHYSICAL REVIEW LETTERS
Volume 85, Issue 8, Pages 1694-1697Publisher
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevLett.85.1694
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Tomographic nanometer-scale images of self-assembled InAs/GaAs quantum dots have been obtained from surface-sensitive x-ray diffraction. Based on the three-dimensional intensity mapping of selected regions in reciprocal space, the method yields the shape of the dots along with the lattice parameter distribution and the vertical interdiffusion profile on a subnanometer scale. The material composition is found to vary continuously from GaAs at the base of the dot to InAs at the top.
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