Journal
PHYSICAL REVIEW LETTERS
Volume 85, Issue 9, Pages 1958-1961Publisher
AMERICAN PHYSICAL SOC
DOI: 10.1103/PhysRevLett.85.1958
Keywords
-
Categories
Ask authors/readers for more resources
Silicon nanowires assembled from clusters or etched from the bulk, connected to aluminum electrodes and passivated, are studied with large-scale local-density-functional simulations. Shore (similar to 0.6 nm) wires are fully metallized by metal-induced gap states resulting in finite conductance (similar to e(2)/h). For longer wires (similar to 2.5 nm) nanoscale Schottky barriers develop with heights larger than the corresponding bulk value by 40% to 90%. Electric transport requires doping dependent gate voltages with the conductance spectra exhibiting interference resonances due to scattering of ballistic channels by the contacts.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available