Journal
APPLIED PHYSICS LETTERS
Volume 77, Issue 11, Pages 1662-1664Publisher
AMER INST PHYSICS
DOI: 10.1063/1.1310209
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We have used photoemission methods to directly measure the valence and conduction band offsets at SrTiO3/Si(001) interfaces, as prepared by molecular-beam epitaxy. Within experimental error, the measured values are the same for growth on n- and p-Si, with the entire band discontinuity occurring at the valence band edge. In addition, band bending is much larger at the p-Si heterojunction than at the n-type heterojunction. Previously published threshold voltage behavior for these interfaces can now be understood in light of the present results. (C) 2000 American Institute of Physics. [S0003-6951(00)05337-7].
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