Resonant-cavity InGaN quantum-well blue light-emitting diodes

We describe progress in blue resonant-cavity light-emitting diodes, based on InGaN/GaN quantum-well heterostructures. We have fabricated vertical-microcavity devices in which either one or both mirrors forming the cavity are patterned, high-reflectivity dielectrics Bragg reflectors. The results suggest that a blue vertical-cavity diode laser may be feasible by this approach. (C) 2000 American Institute of Physics. [S0003-6951(00)00338-7].