Journal
APPLIED PHYSICS LETTERS
Volume 77, Issue 12, Pages 1873-1875Publisher
AMER INST PHYSICS
DOI: 10.1063/1.1310626
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We have investigated the magnetic and magnetotransport properties of (Ga, Mn)As/(Al, Ga)As/(Ga, Mn)As semiconductor-based magnetic trilayer structures. We observe a weak ferromagnetic interlayer coupling between the two ferromagnetic (Ga, Mn)As layers as well as magnetoresistance effects due to spin-dependent scattering and to spin-dependent tunneling. Both the coupling strength and the magnetoresistance ratio decrease with the increase of temperature and/or the increase of Al composition of the nonmagnetic (Al, Ga)As layer. (C) 2000 American Institute of Physics. [S0003-6951(00)00438-1].
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