Formation of DO23-Al3Zr by Zr ion implantation using a metal vapour vacuum arc ion source

The Al-enriched intermetallic compound DO23-Al3Zr was directly formed by Zr ion implantation into AI films at a current density of 64 mu A cm(-2) using a metal vapour vacuum are (MEVVA) ion source at a dose of 3 x 10(17) ions cm(-2). With increasing ion dose the crystallinity of the DO23-AI(3)Zr phase was gradually improved, and at a dose of 5 x 10(17) ions cm(-2) the DO23-Al3Zr layer was about 100 nm thick. The formed DO23-Al3Zr phase played a significant role in enhancing the hardness as well as the elastic modulus of the Al films.