Electronic properties of In2O3 surfaces

Surfaces of reactively evaporated In2O3 films were investigated in situ by synchrotron-excited photoemission. Work function, valence band maximum, and electronic states in the band gap were determined as a function of oxygen pressure. Surface and bulk electronic properties can only be explained consistently with the assumption of a surface depletion layer. (C) 2000 American Institute of Physics. [S0003-6951(00)01339-5].