Journal
RUSSIAN CHEMICAL BULLETIN
Volume 49, Issue 10, Pages 1707-1711Publisher
CONSULTANTS BUREAU
DOI: 10.1007/BF02496338
Keywords
photoelectrochemistry; hydrogen evolution; interfacial charge transfer; kinetics; silicon
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The kinetics of photoelectrochemical hydrogen evolution at p-Si single crystals in acidic aqueous solutions of electrolytes under pulse photoexcitation was studied. Despite a low stability of the silicon surface under the experimental conditions, a distinct interrelation between the characteristic time of interfacial charge transfer and stationary current was found. The determination of the characteristic transfer time does not need the detailed elaboration of generation-recombination processes in the semiconductor. The steady-state current density was shown to be determined both for the dark current and photocurrent by the surface charge density.
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