Journal
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
Volume 39, Issue 10, Pages 5788-5793Publisher
INST PURE APPLIED PHYSICS
DOI: 10.1143/JJAP.39.5788
Keywords
Ni/n-GaAs; Schottky junction; barrier height; surface phenomena; surface control; I-V curve; C-V curve; oxygen adsorption
Categories
Ask authors/readers for more resources
Schottky barrier heights of Ni/n-GaAs junctions were controlled by changing the pH of pretreatment chemicals. An effective barrier height of 0.8 eV was obtained by treatment with dilute HCl liquid (pH = l). and 0.6 eV by treatment with dilute NH4OH liquid (pH = 13). Surface analysis by an x-ray photoelectron spectroscopy indicated the existence of about twice the density of oxygen at the surface of the HCl-treated wafer as compared with that pretreated by the NH4OH liquid. The former shows nearly linear C-2-V characteristics, while the latter shows larger but less frequency dependent capacitances. Two levels of Ni/n-GaAs Schottky barriers were formed on a wafer by successive pretreatments and selective Ni evaporations.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available