Self-assembled Ge nanostructures as field emitters

Self-assembled two-dimensional arrays of Ge islands on Si(111)7x7 were grown by depositing Ge on Si(111)7x7 substrates held at 650 K. It was observed that these islands were conical in shape as well as nearly uniform in size and shape. Consequently, the substrates of about 1 cm(2) area were used as field-emitter arrays. It was found that the arrays exhibited a low onset voltage for field emission, large emission current, as well as high current stability. (C) 2000 American Institute of Physics. [S0003-6951(00)02041-6].