Journal
ELECTRONICS LETTERS
Volume 36, Issue 21, Pages 1809-1810Publisher
IEE-INST ELEC ENG
DOI: 10.1049/el:20001274
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The authors have fabricated an InP/InGaAs uni-travelling-carrier photodiode that exhibits a 3dB bandwidth of 310GHz and a pulse width (FWHM) of 0.97ps, both of which are record values for photodetectors operating at a wavelength of 1.55 mum. The average electron velocity in the depletion region is estimated to be 3.0 x 10(7)cm/s.
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