Electrodeposition of stoichiometric polycrystalline ZnTe on n+-GaAs and Ni-P

An acid aqueous sulphate electrolyte is proposed for the low temperature direct electrochemical growth of single-phase polycrystalline ZnTe. Single-crystal n(+)-GaAs and amorphous electroless Ni-P were used as substrates. The relationship between electrochemical growth conditions and the crystalline structure of as-deposited ZnTe were disclosed and correlated to the cathode chemistry during the growth process. Under suitable plating conditions the removal of tellurium (Te) excess from the deposit can be achieved, resulting in stoichiometric ZnTe. The nucleation of ZnTe was assessed through morphology observations by scanning electron microscopy: an instantaneous type prevails on GaAs and a progressive one on amorphous Ni-P. Chemical depth profiles of Zn and Te were investigated by X-ray photoelectron spectrometry measurements. (C) 2000 Elsevier Science S.A. All rights reserved.