InxGa1-xN light emitting diodes on Si substrates fabricated by Pd-In metal bonding and laser lift-off

Indium-gallium nitride (InxGa1-xN) single-quantum-well (SQW) light emitting diodes (LEDs), grown by metalorganic chemical vapor deposition on sapphire, were transferred onto Si substrates. The thin-film InxGa1-xN SQW LED structures were first bonded onto a n(+)-Si substrate using a transient-liquid-phase Pd-In wafer-bonding process followed by a laser lift-off technique to remove the sapphire growth substrate. Individual, 250x250 mum(2), LEDs with a backside contact through the n(+)-Si substrate were then fabricated. The LEDs had a typical turn-on voltage of 2.5 V and a forward current of 100 mA at 5.4 V. The room-temperature emission peak for the InxGa1-xN SQW LEDs was centered at 455 nm with a full width at half maximum of 19 nm. (C) 2000 American Institute of Physics. [S0003-6951(00)01143-8].