Development and qualification of a vacuum pumping system for metalorganic vapor phase epitaxy copper precursors

Semiconductor devices incorporating copper interconnects are set to revolutionize the performance and functionality of integrated circuits. Copper interconnects enable faster and more reliable circuitry at sub-0.25 mum dimensions with lower resistivity and excellent resistance to electromigration. Numerous methodologies exist whereby copper can be deposited, with chemical vapor deposition (CVD) being one such technique. A vacuum pumping system that effectively and efficiently handles the process byproducts from the CVD precursor Cu(hfac)(TMVS) has been developed and qualified. It is shown that a standard dry pump used in conjunction with additional apparatus in the vacuum system results in the safe handling of process byproducts. The performance of each component of the vacuum system has been individually qualified and the abatement performance of the overall system shows >99% destruction efficiency of process effluent. (C) 2000 American Vacuum Society. [S0734-211X(00)10306-3].