Journal
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
Volume 18, Issue 6, Pages 3198-3201Publisher
AMER INST PHYSICS
DOI: 10.1116/1.1321753
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We demonstrate that electrochemical metal deposition selectivity may be attained by intentionally introducing defects in a semiconductor surface. The electrolyte-semiconductor surface shows a similar characteristic to a p-n junction, which when reverse biased into (Schottky) breakdown, electrochemical reactions become possible. To achieve electrochemical deposition of metals, a p-type semiconductor must be used. The defects are patterned by focused ion beam silicon ion implantation. Gold was selectively deposited only on the defective surface from a gold containing KCN electrolyte. (C) 2000 American Vacuum Society. [S0734-211X3(00)14206-4].
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