Chemical vapor deposition of titanium nitride thin films from tetrakis(dimethylamido)titanium and hydrazine as a coreactant

Hydrazine was used as a coreactant with tetrakis(dimethylamido)titanium for the low-temperature chemical vapor deposition of TiN between 50 and 200 degreesC. The TiN film-growth rates ranged from 5 to 45 nm/min. Ti:N ratios of approximately 1:1 were achieved. The films contain between 2 and 25 at.% carbon, as well as up to 36 at.% oxygen resulting from diffusion after air exposure. The resistivity of these films is approximately 10(4) mu Omega cm. Annealing the films in ammonia enhances their crystallinity. The best TiN films were produced at 200 degreesC from a 2.7% hydrazine-ammonia mixture. The Ti:N ratio of these films is approximately 1:1, and they contain no carbon or oxygen. These films exhibit the highest growth rates observed.