Journal
IEEE PHOTONICS TECHNOLOGY LETTERS
Volume 12, Issue 11, Pages 1438-1440Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/68.887642
Keywords
semiconductor lasers; vertical-cavity surface-emitting lasers (VCSELs); wafer bonding
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We report 85 degreesC continuous-wave electrically pumped operation of a 1528-nm vertical-cavity laser. An InP-In-GaAsP active region was wafer bonded to GaAs-AlGaAs mirrors, with a superlattice barrier to reduce defect density in the active region.
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