Journal
VACUUM
Volume 59, Issue 2-3, Pages 492-499Publisher
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/S0042-207X(00)00307-9
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Highly conductive ITO films were prepared by DC magnetron sputtering on glass substrates. Hall measurements of the films were carried out at 6-300 K in order to examine the transport properties of electron carriers in the films. Carrier density of all films studied in this experiment showed degenerate semiconductive behavior. The Hall mobility of as-deposited films exhibited a negative dependence above 150 K on temperature with mu proportional to T-0.1 similar to -0.15. It indicated that the phonon scattering is one of the dominant scattering centers of electron carriers of the film, By oxidation of the films, a decrease in the mobility was observed as well as a lack of the negative dependence. The lack of the negative dependence is attributed to a decrease in the phonon scattering due to a decrease in carrier density, It assumed that doubly charged, interstitial oxygen defects O-i introduced in grain boundary of the alms preferentially act as charge traps and neutral impurity defects ((SnIn2Oi)-O-.) act as carrier scattering centers. (C) 2000 Elsevier Science Ltd. All rights reserved.
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