Gd2O3/GaN metal-oxide-semiconductor field-effect transistor

Gd2O3 has been deposited epitaxially on GaN using elemental Gd and an electron cyclotron resonance oxygen plasma in a gas-source molecular beam epitaxy system. Cross-sectional transmission electron microscopy shows a high concentration of dislocations which arise from the large lattice mismatch between the two materials. GaN metal-oxide-semiconductor field-effect transistors (MOSFETs) fabricated using a dielectric stack of single crystal Gd2O3 and amorphous SiO2 show modulation at gate voltages up to 7 V and are operational at source drain voltages up to 80 V. This work represents demonstrations of single crystal growth of Gd2O3 on GaN and of a GaN MOSFET using Gd2O3 in the gate dielectric. (C) 2000 American Institute of Physics. [S0003-6951(00)03746-3].