Effects of growth conditions on the incorporation of oxygen in AlGaN layers grown by plasma assisted molecular beam epitaxy

Using secondary ion mass spectroscopy we have shown that oxygen incorporation in AlGaN films is dependent upon the III/V growth conditions and the growth temperature of the films. AlGaN films grown under excess group III conditions (Ga-rich) exhibited step flow growth and at least a factor of 3 less oxygen incorporation than films grown under excess group V (N-rich conditions). We found that oxygen incorporation into AlGaN decreases as the growth temperature is increased. The lowest oxygen levels were achieved by growing at 750 degreesC under Ga-rich growth conditions. Possible sources of unwanted oxygen are discussed. (C) 2000 American Institute of Physics. [S0003-6951(00)01346-2].