Journal
APPLIED PHYSICS LETTERS
Volume 77, Issue 21, Pages 3373-3375Publisher
AMER INST PHYSICS
DOI: 10.1063/1.1328047
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Wurtzite GaN films grown on sapphire substrates are studied by nanoindentation with a spherical indenter. No systematic dependence of the mechanical properties of GaN epilayers on the film thickness (at least for thicknesses from 1.8 to 4 mum) as well as on doping type is observed. Slip is identified as one of the physical mechanisms responsible for plastic deformation of GaN and may also contribute to the pop-in events observed during loading. No visible material cracking is found even after indentations at high loads (900 mN), but a pronounced elevation of the material surrounding the impression is observed. (C) 2000 American Institute of Physics. [S0003-6951(00)04447-8].
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