Journal
ELECTRONICS LETTERS
Volume 36, Issue 24, Pages 2043-2044Publisher
IEE-INST ELEC ENG
DOI: 10.1049/el:20001401
Keywords
-
Categories
Ask authors/readers for more resources
A fast high-power solid-state switch based on a novel large periphery multigate AlGaN/GaN metal-oxide-semiconductor heterostructure field effect transistor (MOSHFET) over 4H-SiC substrates is demonstrated. For a device with 1mm periphery and 10 mum gate-drain spacing, 7.5kW/mm(2) of switched power with on-state resistance of 75mW x mm(2) is obtained. The pulse response of the MOSHFET switch exhibited a rise-time < 5ns in pulsemode operation.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available