Journal
IEEE TRANSACTIONS ON NUCLEAR SCIENCE
Volume 47, Issue 6, Pages 2451-2459Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/23.903792
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A new damage factor formulation is presented for describing radiation-induced dark current in silicon devices. This damage factor, K-dark, is the number of carriers thermally generated per unit volume per unit time in a depletion region per unit nonionizing dose deposited in that volume. K-dark appears to account successfully for the mean radiation-induced dark current for any silicon device in which thermal generation at bulk centers dominates. This dark-current damage factor applies for devices in all radiation environments except those that produce relatively isolated defects. Evidence is presented which strongly indicates that the defects responsible for dark current increases are not associated with impurities.
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